Envoyer le message

IXTH64N65X

fabricant:
IXYS
Description:
MOSFET N-CH 650V 64A TO247
Catégorie:
Produits semiconducteurs discrets
Caractéristiques
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Caractéristique de FET:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
143 nC @ 10 V
Rds On (Max) @ Id, Vgs:
51mOhm @ 32A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5500 pF @ 25 V
Mounting Type:
Through Hole
Series:
Ultra X
Supplier Device Package:
TO-247 (IXTH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
Power Dissipation (Max):
890W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTH64
Introduction
N-canal 650 V 64A (Tc) 890W (Tc) à travers le trou TO-247 (IXTH)
Related Products
Envoyez le RFQ
Courant:
MOQ: