Le numéro IRFP4768PBF
Caractéristiques
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
270 nC @ 10 V
Rds On (Max) @ Id, Vgs:
17.5mOhm @ 56A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
le paquet:
Tuyaux
Drain to Source Voltage (Vdss):
250 V
Vgs (maximum):
± 20 V
Product Status:
Active
La capacité d'entrée (Ciss) (max) @ Vds:
10880 PF @ 50 V
Mounting Type:
Through Hole
Série:
HEXFET®
Supplier Device Package:
TO-247AC
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
93A (Tc)
Power Dissipation (Max):
520W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFP4768
Introduction
N-canal 250 V 93A (Tc) 520W (Tc) à travers le trou TO-247AC
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