FQD13N06LTM
fabricant:
Uniseme
Description:
MOSFET N-CH 60V 11A DPAK
Catégorie:
Produits semiconducteurs discrets
Caractéristiques
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Caractéristique de FET:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Température de fonctionnement:
-55°C à 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Charge de la porte (Qg) (max) @ Vgs:
6.4 nC @ 5 V
Rds On (Max) @ Id, Vgs:
115mOhm @ 5.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252AA
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Power Dissipation (Max):
2.5W (Ta), 28W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQD13N06
Introduction
N-canal 60 V 11A (Tc) 2,5 W (Ta), 28 W (Tc) Monture de surface TO-252AA
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