FDM3622
fabricant:
Uniseme
Description:
MOSFET N-CH 100V 4.4A 8MLP
Catégorie:
Produits semiconducteurs discrets
Caractéristiques
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Rds On (Max) @ Id, Vgs:
60mOhm @ 4.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1090 pF @ 25 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-MLP (3.3x3.3)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
4.4A (Ta)
Power Dissipation (Max):
2.1W (Ta)
Technology:
MOSFET (Metal Oxide)
Numéro du produit de base:
FDM362
Introduction
N-Channel 100 V 4.4A (Ta) 2.1W (Ta) Monture de surface 8-MLP (3.3x3.3)
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