2SJ650
Caractéristiques
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
P-Channel
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Bulk
Vgs(th) (maximum) @ Id:
-
Series:
-
Charge de la porte (Qg) (max) @ Vgs:
21 OR @ 10 V
Supplier Device Package:
TO-220ML
Rds On (Max) @ Id, Vgs:
135mOhm @ 6A, 10V
Mfr:
onsemi
Température de fonctionnement:
150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1020 pF @ 20 V
Drain to Source Voltage (Vdss):
60 V
Power Dissipation (Max):
2W (Ta), 20W (Tc)
Package / Case:
TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
P-canal 60 V 12A (Ta) 2W (Ta), 20W (Tc) à travers le trou TO-220ML
Envoyez le RFQ
Courant:
MOQ: