Le numéro de série FCPF11N60
fabricant:
Uniseme
Description:
MOSFET N-CH 600V 11A TO220F
Catégorie:
Produits semiconducteurs discrets
Caractéristiques
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
52 nC @ 10 V
Rds On (Max) @ Id, Vgs:
380mOhm @ 5.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Not For New Designs
La capacité d'entrée (Ciss) (max) @ Vds:
1490 pF @ 25 V
Mounting Type:
Through Hole
Série:
SuperFET™
Supplier Device Package:
TO-220F-3
Mfr:
Uniseme
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Dissipation de puissance (maximum):
36W (comité technique)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCPF11
Introduction
N-canal 600 V 11A (Tc) 36W (Tc) à travers le trou TO-220F-3
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