Le système FDMS8050ET30
fabricant:
Uniseme
Description:
MOSFET N-CH 30V 55A/423A POWER56
Catégorie:
Produits semiconducteurs discrets
Caractéristiques
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 750µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Charge de la porte (Qg) (max) @ Vgs:
285 nC @ 10 V
Rds On (Max) @ Id, Vgs:
0.65mOhm @ 55A, 10V
Type de FET:
N-canal
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
le paquet:
Tape et bobine (TR)
Tape à découper (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (maximum):
± 20 V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
22610 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
55A (Ta), 423A (Tc)
Power Dissipation (Max):
3.3W (Ta), 180W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS8050
Introduction
N-Channel 30 V 55A (Ta), 423A (Tc) 3,3 W (Ta), 180 W (Tc) Monture de surface 8-PQFN (5x6)
Envoyez le RFQ
Courant:
MOQ: